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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD953 DESCRIPTION With TO-3 package Built-in damper diode High voltage capability APPLICATIONS Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VEBO IC ICM PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 5 Collector-base voltage Emitter-base voltage Open emitter Open collector Collector current 5 Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 7 95 130 -65~130 UNIT V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500m A;IC=0 IC=4.5 A;IB=2 A IC=4.5 A;IB=2 A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 VF tf ts DC current gain DC current gain Diode forward voltage Fall time IC=1A ; VCE=5V IC=4A ; VCE=10V IF=5A 8 3 MIN 5 TYP. 2SD953 SYMBOL V(BR)EBO VCEsat VBEsat MAX UNIT V 5.0 1.5 0.1 V V mA 1.0 NDU ICO E SEM ANG INCH IC=4A;IBend=2A;LB=10|I H Storage time TOR 1.6 13.5 V |I |I s s 0.8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD953 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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